Surface barrier height lowering at above 540 K in AlInN/AlN/GaN heterostructures
نویسندگان
چکیده
منابع مشابه
Barrier inhomogeneities at vertically stacked graphene-based heterostructures.
The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. ...
متن کاملInhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.
Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...
متن کاملResonant Tunneling in Double Superlattice Barrier Heterostructures
We have invest igated resonant tunnel ing in double barr ier heterostructures in which the tunnel barr iers have been replaced by short period superlattices, and have shown for the first t ime quantum well confinement in a s ingle quantum well bounded by superlattices. These results also demonstrate the first u t i l iza t ion of shor t period b ina ry super la t t ices as effective t unne l ba...
متن کاملCharge carrier induced barrier height reduction at organic heterojunctions
In order to provide an accurate theoretical description of current density voltage (J −V ) characteristics of an organic heterojunction device over a wide range of electric fields at various temperatures, it is proposed that an accumulation of charge carriers at the heterojunction will lead to a reduction in the barrier height across the heterojunction. Two well-known hole transporting material...
متن کاملCounting Peaks at Height K in a Dyck Path
A Dyck path is a lattice path in the plane integer lattice Z × Z consisting of steps (1, 1) and (1,−1), which never passes below the x-axis. A peak at height k on a Dyck path is a point on the path with coordinate y = k that is immediately preceded by a (1, 1) step and immediately followed by a (1,−1) step. In this paper we find an explicit expression to the generating function for the number o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3644161